发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MAKING SAME
摘要 One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
申请公布号 EP1929545(A4) 申请公布日期 2014.03.05
申请号 EP20060791170 申请日期 2006.09.29
申请人 LATTICE POWER (JIANGXI) CORPORATION 发明人 JIANG, FENGYI;WANG, LI;FANG, WENQING
分类号 H01L33/00;H01L33/32;H01L33/14;H01L33/38 主分类号 H01L33/00
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