| 摘要 |
<p>A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode.</p> |
