发明名称 |
System and method of ion beam source for semiconductor ion implantation |
摘要 |
An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field. |
申请公布号 |
US8664622(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201213443994 |
申请日期 |
2012.04.11 |
申请人 |
HWANG CHIH-HONG;CHANG CHUN-LIN;YANG CHI-MING;LIN CHIN-HSIANG;KU WEN-YU;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HWANG CHIH-HONG;CHANG CHUN-LIN;YANG CHI-MING;LIN CHIN-HSIANG;KU WEN-YU |
分类号 |
H01J27/00;A61N5/00;G21G5/00 |
主分类号 |
H01J27/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|