发明名称 Epitaxial Substrate and Liquid Phase Epitaxial Growth Method
摘要 The present invention provides an epitaxial substrate formed by stacking the epitaxial layer on the substrate by liquid phase epitaxial generating method. The carbon concentration profile in an epitaxial layer laminated on said substrate crosses with the concentration profile of plus or minus 50% of concentration of carbon based on tool supplying for holding solvent formed by carbon. Thus the invention provides an epitaxial substrate and liquid phase epitaxial generating method, the epitaxial substrate has arbitrary carbon concentration profile after adjusting but not fixed carbon concentration profile generated by autodoping of tool.
申请公布号 KR101369201(B1) 申请公布日期 2014.03.04
申请号 KR20070076979 申请日期 2007.07.31
申请人 发明人
分类号 C30B19/04;C30B29/40;H01L21/20;H01L21/208 主分类号 C30B19/04
代理机构 代理人
主权项
地址