MASK RESIDUE REMOVAL FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH

摘要

Methods of dicing substrates having a plurality of ICs. A method includes forming a mask and patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is etched through the gaps in the patterned mask to singulate the IC. The mask is removed and metallized bumps on the diced substrate are contacted with an inorganic acid solution to remove mask residues.