发明名称 |
GATE TUNABLE TUNNEL DIODE |
摘要 |
A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric. |
申请公布号 |
US2014054551(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201213597610 |
申请日期 |
2012.08.29 |
申请人 |
AFZALI-ARDAKANI ALI;FARMER DAMON;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AFZALI-ARDAKANI ALI;FARMER DAMON |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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