TRENCH-GATE-TYPE POWER SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a trench-gate-type power semiconductor element capable of preventing an increase in contact resistance and preventing product breakage phenomenon due to passing a large-capacity current by preventing deviation of a current in one direction.SOLUTION: A trench-gate-type power semiconductor element 100 according to the present invention includes: a semiconductor substrate 110; a drift layer 120 formed on the semiconductor substrate 110; a well layer 130 formed on the drift layer 120; a trench 140 formed so as to penetrate through the well layer 130 in the thickness direction and to reach the drift layer 120; a first insulating film 141 formed from a bottom surface 140b of the trench 140 to a predetermined height; a first electrode 150 formed in the trench 140 with a height lower than the first insulating film 141; an interlayer insulating film 160 formed in the trench 140 to the same height as the first insulating film 141; and a second electrode 170 formed on the well layer 130, having a portion corresponding to the trench 140 that is protrudingly formed in the trench 140, and being in contact with the interlayer insulating film 160.