CMOS BOLOMETER

摘要

A method of manufacturing a semiconductor device includes forming at least one sacrificial layer (106, 108, 110) on a substrate (100) during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer (130) is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer (106, 108, 110) beneath the absorber layer is removed to form a gap (G1) over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.