发明名称 GATE DRIVE CIRCUIT AND ASSOCIATED METHOD
摘要 <p>A method of driving a number of series connected active power semiconductor groups, wherein each of the active power semiconductor groups includes one or more gate oxide-isolated active power semiconductor devices. The method includes generating a current pulse, providing the current pulse to a primary portion of a transformer unit and in response thereto causing a number of reflected current pulses to be reflected at a secondary portion of the transformer unit, and transferring and latching each of the reflected current pulses to create a respective latched gate drive signal, and providing each respective latched gate drive signal to an associated one of the active power semiconductor groups for driving the one or more gate oxide-isolated active power semiconductor devices of the associated one of the active power semiconductor groups. Also, a gate drive circuit that implements the method.</p>
申请公布号 EP2700164(A1) 申请公布日期 2014.02.26
申请号 EP20120774872 申请日期 2012.04.19
申请人 GE ENERGY POWER CONVERSION TECHNOLOGY LIMITED 发明人 PERMUY, ALFRED;BENAVIDES, NICHOLAS, D.;SOLOMON, LUKE
分类号 H03K3/00;H02M1/088 主分类号 H03K3/00
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