发明名称 |
SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a first insulating layer on a substrate; a first contact hole passing through the first insulating layer and exposing an upper surface of the substrate; a first barrier metal layer disposed on a sidewall and at a bottom of the first contact hole and a first metal plug disposed on the first barrier metal layer and in the first contact hole. A recess region is between the first insulating layer and the first metal plug. A gap-fill layer fills the recess region; and a second insulating layer is on the gap-fill layer. A second contact hole passes through the second insulating layer and exposes the upper surface of the first metal plug. A second barrier metal layer is on a sidewall and at the bottom of the second contact hole; and a second metal plug is on the second barrier metal layer. |
申请公布号 |
US2014048939(A1) |
申请公布日期 |
2014.02.20 |
申请号 |
US201313796195 |
申请日期 |
2013.03.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANGJINE;YOON BOUN;HAN JEONGNAM;KWON KEE-SANG;CHOI WONSANG |
分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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