发明名称 DOPING METHOD FOR ZINC OXIDE (ZnO) CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a doping method which is safe and easy, and is capable of obtaining p-type ZnO crystals excellent in controllability, regardless of the composition, conductivity type or the like of crystals to be doped.SOLUTION: A doping method includes the steps of: coating an aqueous solution of a diffusion agent of a compound containing a group I element as a constituent element on ZnO crystals to be fixed by drying; and subjecting the ZnO crystals including the diffusion agent fixed thereon to heat treatment and diffusing the group I element into the ZnO based crystals.
申请公布号 JP2014033089(A) 申请公布日期 2014.02.20
申请号 JP20120172921 申请日期 2012.08.03
申请人 STANLEY ELECTRIC CO LTD 发明人 SATO YUKA;HORIO TADASHI
分类号 H01L21/225;H01L33/28 主分类号 H01L21/225
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