| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability of a semiconductor device.SOLUTION: After forming interconnected trench TR1 for gate and trench TR2 for gate lead-out, and an insulation film GI for gate insulation on the inner surface of the trenches TR1, TR2, the trenches TR1, TR2 are filled with a lamination film LM having a conductive film CD1, a material film MT thereon and a conductive film CD2 further thereon. A gate electrode GE is formed of the lamination film LM filling the trench TR1. Subsequently, an insulation film IL2 is formed on a substrate SUB, followed by formation of contact holes CT1, CT2. Above the trench TR2, the contact hole CT2 for exposing the conductive film CD1 is formed by etching the insulation film IL2, and the conductive film CD2 and material film MT in the trench TR2, and the material film MT functions as an etching stopper film when etching the conductive film CD2. |
