| 摘要 |
A method for etching of SiO2 layers with a thickness of equal to or less than 10 μm on a semiconductor item having a thickness of equal to or less than 10 μm, comprising a step of etching the SiO2 layer wherein an etching gas is applied which contains NF3, SF6, or preferably, F2 or COF2, and wherein said etching gas further comprises O2 and/or H2. |
