| 发明名称 |
Access transistor for memory device |
| 摘要 |
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element. |
| 申请公布号 |
US8652903(B2) |
申请公布日期 |
2014.02.18 |
| 申请号 |
US20100730611 |
申请日期 |
2010.03.24 |
| 申请人 |
DALEY JON;CAMPBELL KRISTY A.;BROOKS JOSEPH F.;MICRON TECHNOLOGY, INC. |
发明人 |
DALEY JON;CAMPBELL KRISTY A.;BROOKS JOSEPH F. |
| 分类号 |
H01L21/8239 |
主分类号 |
H01L21/8239 |
| 代理机构 |
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