METHOD FOR PROVIDING VIAS

摘要

Provided is a method for forming the via hole of an etching layer arranged under a patterned organic mask having patterned via holes. A flowing process using a process gas as H2 is performed on the patterned organic mask. Plasma is generated from the process gas. To form a rounded via hole patterned by exposing the patterned via hole to the plasma, the patterned via hole is rounded. The flow of the process gas is stopped. Patterned and rounded via holes are transferred to the etching layer. [Reference numerals] (104) Arrange a substrate inside a chamber; (108) Rounding an organic mask via hole; (112) Transfer the rounded via hole to an etching layer; (AA) Start; (BB) Stop