SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a substrate processing method and a substrate processing apparatus which can form an insulation film of good quality in a low temperature region.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a thin film having a predetermined composition and a predetermined film thickness on a substrate by performing a cycle predetermined times, which includes a process of supplying a first silane-based material having a halogen-based ligand to the substrate, a process of supplying a second silane-based material having an amino group to the substrate and a process of supplying a reaction gas different from each material to the substrate.