| 摘要 |
A thin film transistor and a manufacturing method thereof are provided to prevent a heat accumulation phenomenon by forming a plurality of channel units separately. A plurality of sub thin film transistors include ring type channel units respectively. A plurality of channel units(115) of sub thin film transistors are formed to be separated. The sub thin transistor includes a source electrode(108), a drain electrode, a semiconductor layer, and a gate electrode(106). The source electrode has a ring shape to surround the channel unit. The drain electrode is formed to face an inner surface of the source electrode while interposing a channel. The semiconductor forms the channel between the source and drain electrodes. The gate electrode is overlapped with the semiconductor layer. |
