发明名称 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD AND OPERATING METHOD OF THE SAME
摘要 A semiconductor structure and a manufacturing method and an operating method of the same are provided. The semiconductor structure includes a substrate, a main body structure, a first dielectric layer, a first conductive strip, a second conductive strip, a second dielectric layer, and a conductive structure. The main body structure is formed on the substrate, and the first dielectric layer is formed on the substrate and surrounding two sidewalls and a top portion of the main body structure. The first conductive strip and the second conductive strip are formed on two sidewalls of the first dielectric layer, respectively. The second dielectric layer is formed on the first dielectric layer, the first conductive strip, and the second conductive strip. The conductive structure is formed on the second dielectric layer.
申请公布号 US2014043067(A1) 申请公布日期 2014.02.13
申请号 US201213570411 申请日期 2012.08.09
申请人 CHEN SHIH-HUNG;LUE HANG-TING;MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN SHIH-HUNG;LUE HANG-TING
分类号 H03K3/00;H01L21/28;H01L23/48 主分类号 H03K3/00
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