| 摘要 |
An exemplary flip-chip package is provided, including: a package structure having a first bonding pad and a second bonding pad formed thereon, wherein the first bond pad has a feature size different from a feature size of the second bond pad; a semiconductor chip facing the package structure, having a first under bump metal (UBM) layer and a second under bump metal (UBM) layer formed thereon, wherein the first UBM layer has a feature size different from a feature size of the second UBM layer; a first conductive element disposed between the first bond pad and the first UBM layer; and a second conductive element disposed between the second bond pad and the second UBM layer. |
