| 摘要 |
<p>In this method for producing a semiconductor device resulting from two semiconductor substrates (11) being joined, first, a groove pattern (17) is formed at a scribing region (16) at the reverse surface side of at least one of the semiconductor substrates (11) of the two semiconductor substrates (11) that are to be joined. As such a time, the groove pattern (17) is formed at a depth or width that is at least the diameter of envisioned particles. Next, the reverse surfaces of the two semiconductor substrates (11) are joined to each other. As a result, the effect of the particles is mitigated at the groove pattern (17) portion, and so it is possible to suppress void defects from extending to adjacent chip regions (12). Therefore it is possible to increase yield by minimizing the effect of void defects on adjacent chips.</p> |
