发明名称 IMAGE PICKUP ELEMENT, SEMICONDUCTOR INTEGRATED CIRCUIT, AND IMAGE PICKUP APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a small-sized MOS sensor having an element structure from which a deadband zone on a sensor surface is eliminated, and a small-sized image pickup apparatus comprising the same.SOLUTION: An image pickup element is configured by stacking a first semiconductor element in which a light-receptive region is formed, and a second semiconductor element in which a pixel drive and read circuit is formed via a micro pad and a micro bump. In the image pickup element, global wiring extends to an end portion of the element in accordance with a control signal on the first semiconductor element, and vertical and horizontal scanning circuits formed on the second semiconductor element are arranged such that longitudinal directions thereof become parallel to each other.
申请公布号 JP2014030170(A) 申请公布日期 2014.02.13
申请号 JP20130033593 申请日期 2013.02.22
申请人 SHIZUKUISHI MAKOTO 发明人 SHIZUKUISHI MAKOTO
分类号 H04N5/374;A61B1/04;H01L27/14;H01L27/146;H04N5/225 主分类号 H04N5/374
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