NITRIDE SEMICONDUCTOR DEVICE ELECTRODE STRUCTURE AND NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an electrode structure of a nitride semiconductor device which can improve breakdown voltage (ON breakdown voltage) at On-time.SOLUTION: According to the present electrode structure, a source electrode (111) and a drain electrode (112) are formed from recesses (116, 119) of a nitride semiconductor laminate (105) across a surface (107C) of the insulation film (107) so as to contact the surface of the nitride semiconductor laminate (105) between the insulation film (107) and opening edges (116A 119A) of the recesses (116, 119) of the nitride semiconductor laminate (105). According to such ohmic electrode structure, in comparison with an electrode in the past where an edge of an ohmic electrode is sandwiched between the nitride semiconductor laminate and the insulation film, a maximum electric field strength at ON-time on ends of the source electrode (111) and the drain electrode (112), which are adjacent to the nitride semiconductor laminate (105) can be reduced thereby to improve ON breakdown voltage.