| 摘要 |
In a method of inspecting a die picked up from a wafer in a die bonding process, the die picked up from a wafer is placed on a die stage and then the die is irradiated with the predetermined quantity of light in order not to detect the pattern of the die located on the die stage. The image of the die located on the die stage is obtained and then a foreign material and a defect on the die are detected from the image. Because the pattern of the die and so on does not displayed in the image of the die, the foreign material and the defect can be easily detected from the die. [Reference numerals] (AA) Start; (BB) End; (S100) Locate a die on a die stage; (S102) Light the front side of the die with the first light intensity in which die patterns are controlled not to be detected; (S104) Obtain front side images of the die; (S106) Detect foreign substances and defectives of the die from the front side images; (S108) Pick-up the die from the die stage; (S110) Light the rear side of the picked-up the die with the second light intensity; (S112) obtain rear side images of the die; (S114) Detect foreign substances and defectives of the die from the rear side images; (S116) Store the die in which the foreign substances and defectives are detected in a die removal container |
