发明名称 |
Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same |
摘要 |
A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane. |
申请公布号 |
US8647967(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US20090474143 |
申请日期 |
2009.05.28 |
申请人 |
SAITO MAKOTO;KAWABATA SHIN-ICHIRO;KAMBER DERRICK S.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
SAITO MAKOTO;KAWABATA SHIN-ICHIRO;KAMBER DERRICK S.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|