发明名称 RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME
摘要 <p>For stably forming a high-precision fine pattern and thereby producing a highly integrated electronic device with high precision, a resist composition for negative tone development, which can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension and furthermore, can ensure excellent bridge margin, and a pattern forming method using the same are provided. A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, wherein the logP value of the acid generated from the (B) compound capable of generating an acid upon irradiation with an actinic ray or radiation is from 1.5 to 12.0; and a pattern forming method using the same.</p>
申请公布号 KR20140016435(A) 申请公布日期 2014.02.07
申请号 KR20147001504 申请日期 2008.06.12
申请人 FUJIFILM CORPORATION 发明人 TSUBAKI HIDEAKI
分类号 G03F7/004;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/004
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