发明名称 CHARGED PARTICLE BEAM DEVICE
摘要 <p>The present invention is a defect inspection device that makes use of the fact that the contrast of grains and voids in a copper wire of a semiconductor in a scanning electron microscope varies depending on the acceleration voltage for electron beam irradiation. This charged particle beam device irradiates an electron beam at a plurality of acceleration voltages onto the same location of a specimen, and differentiates grains (65, 66) and voids (67) on the basis of the amount of change in contrast the same location in a plurality of images (61, 62) taken in correlation to the plurality of acceleration voltages, respectively. Grains and voids can thereby be automatically differentiated and detected at high speed without destruction of the specimen.</p>
申请公布号 WO2014021019(A1) 申请公布日期 2014.02.06
申请号 WO2013JP67022 申请日期 2013.06.21
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 BAN NAOMA;OBARA KENJI;HIRAI TAKEHIRO
分类号 H01J37/22;H01J37/28;H01L21/66 主分类号 H01J37/22
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