发明名称 |
CHARGED PARTICLE BEAM DEVICE |
摘要 |
<p>The present invention is a defect inspection device that makes use of the fact that the contrast of grains and voids in a copper wire of a semiconductor in a scanning electron microscope varies depending on the acceleration voltage for electron beam irradiation. This charged particle beam device irradiates an electron beam at a plurality of acceleration voltages onto the same location of a specimen, and differentiates grains (65, 66) and voids (67) on the basis of the amount of change in contrast the same location in a plurality of images (61, 62) taken in correlation to the plurality of acceleration voltages, respectively. Grains and voids can thereby be automatically differentiated and detected at high speed without destruction of the specimen.</p> |
申请公布号 |
WO2014021019(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
WO2013JP67022 |
申请日期 |
2013.06.21 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
BAN NAOMA;OBARA KENJI;HIRAI TAKEHIRO |
分类号 |
H01J37/22;H01J37/28;H01L21/66 |
主分类号 |
H01J37/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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