| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor having a good current gain, and to provide a manufacturing method therefor.SOLUTION: The heterojunction bipolar transistor includes a substrate 201, a p-type buffer layer 203, a sub-collector layer 207, a collector layer 209, a base layer 211, and an emitter layer 213. A plurality of etching treatments are used for etching the emitter layer 213 in a base electrode contact region, and stopping the etching in the base layer. The base layer 211 and collector layer 209 in a collector electrode contact region are removed by the etching treatment stopping in the sub-collector layer, and the collector electrode is provided on the sub-collector layer in the collector electrode contact region. The emitter electrode is provided on the emitter layer. |
