| 摘要 |
<p>Provided are: a method for manufacturing a single crystal silicon carbide substrate, whereby generation of breakage of a single crystal silicon carbide substrate in a bonding step in a post process is suppressed by sufficiently suppressing warpage generated in a seed substrate at the time of manufacturing the single crystal silicon carbide substrate using an MSE method; and a single crystal silicon carbide substrate. Disclosed is a method for manufacturing a single crystal silicon carbide substrate using metastable solvent epitaxy, specifically: a method for manufacturing a single crystal silicon carbide substrate using, as a weight, a weight having the surface facing a seed substrate formed of silicon carbide; and a method for manufacturing a single crystal silicon carbide substrate using, as a weight, a weight formed of silicon carbide or a weight having a silicon carbide layer formed at least on a surface on the side facing the seed substrate. Also disclosed is a single crystal silicon carbide substrate manufactured by means of the method for manufacturing a single crystal silicon carbide substrate.</p> |
