| 摘要 |
<p>Provided is a nitride semiconductor structure (10) that includes: a substrate (1) having a plurality of projected portions (1a) on a surface thereof, wherein the surface is covered with a nitride semiconductor intermediate layer (2); first nitride semiconductor base layers (3), second nitride semiconductor base layers (4), and third nitride semiconductor base layers (5) that are provided in this order between the projected portions (1a) on the substrate (1) so as to expose at least a part of surfaces of the projected portions (1a) including the centers thereof, wherein the second nitride semiconductor base layer (4) covers the entirety of the first nitride semiconductor base layer (3), and the third nitride semiconductor base layer (5) covers the entirety of the second nitride semiconductor base layer (4); and a fourth nitride semiconductor base layer (6) that covers the exposed surfaces of the projected portions (1a) and the entirety of the third nitride semiconductor base layers (5). The first nitride semiconductor base layer (3) has first oblique facet surfaces, the second nitride semiconductor base layer (4) has second oblique facet surfaces and a second substrate-parallel surface, and the third nitride semiconductor base layer (5) has third oblique facet surfaces and a third substrate-parallel surface.</p> |
