| 摘要 |
A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques. |
