| 摘要 |
Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film.
(where R is a linear or branched alkyl group)
(where R is an alkyl group)
(where R is an alkyl group)
(where A1 and A2 are represented by Formula 8)
(where R is an alkyl group or another substituent) |
