| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a horizontal Schottky barrier diode (SBD) semiconductor device which operates fast by reducing Schottky junction capacitance. <P>SOLUTION: The semiconductor device includes a substrate, a first semiconductor layer provided on the substrate, and an energy band gap provided on the first semiconductor layer and larger than the first semiconductor layer and induces a two-dimensional electron gas on an interface between the first semiconductor layer and a second semiconductor layer. Furthermore, the semiconductor device includes a first electrode having Schottky contact with the second semiconductor layer, a second electrode having ohmic contact with the second semiconductor layer, and a semiconductor region which is provided right below a central portion of the first electrode and in which the two-dimensional electron gas distributed right below the central portion of the first electrode disappears. <P>COPYRIGHT: (C)2010,JPO&INPIT |
