发明名称 |
Method of making a semiconductor structure useful in making a split gate non-volatile memory cell |
摘要 |
A semiconductor device comprises a semiconductor substrate and a select gate structure over a first portion of the semiconductor substrate. The select gate structure comprises a sidewall forming a corner with a second portion of the semiconductor substrate and a charge storage stack over an area comprising the second portion of the semiconductor substrate, the sidewall, and the corner. A corner portion of a top surface of the charge storage stack is non-conformal with the corner, and the corner portion of the top surface of the charge storage stack has a radius of curvature measuring approximately one-third of a thickness of the charge storage stack over the second portion of the substrate or greater. A control gate layer is formed over the charge storage stack. A portion of the control gate layer conforms to the corner portion of the top surface of the charge storage stack. |
申请公布号 |
US8643123(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201113085533 |
申请日期 |
2011.04.13 |
申请人 |
HONG CHEONG M.;WINSTEAD BRIAN A.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HONG CHEONG M.;WINSTEAD BRIAN A. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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