发明名称 |
Short channel lateral MOSFET |
摘要 |
A short channel Lateral MOSFET (LMOS) and method are disclosed with interpenetrating drain-body protrusions (IDBP) for reducing channel-on resistance while maintaining high punch-through voltage. The LMOS includes lower device bulk layer; upper source and upper drain region both located atop lower device bulk layer; both upper source and upper drain region are in contact with an intervening upper body region atop lower device bulk layer; both upper drain and upper body region are shaped to form a drain-body interface; the drain-body interface has an IDBP structure with a surface drain protrusion lying atop a buried body protrusion while revealing a top body surface area of the upper body region; gate oxide-gate electrode bi-layer disposed atop the upper body region forming an LMOS with a short channel length defined by the horizontal length of the top body surface area delineated between the upper source region and the upper drain region. |
申请公布号 |
US8643137(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201213488350 |
申请日期 |
2012.06.04 |
申请人 |
MALLIKARJUNASWAMY SHEKAR;PAUL AMIT;ALPHA & OMEGA SEMICONDUCTOR, INC. |
发明人 |
MALLIKARJUNASWAMY SHEKAR;PAUL AMIT |
分类号 |
H01L23/58;H01L29/66 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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