| 摘要 |
PROBLEM TO BE SOLVED: To collectively form hermetic seal of a compound semiconductor element at a wafer level without causing deterioration in the compound semiconductor element, while the compound semiconductor element can be reduced in size down to a chip level.SOLUTION: A first junction surface 103a and a second junction surface 105a are irradiated with an Ar beam in a vacuum chamber maintained in a vacuum evacuated state to be subjected to surface activation, thereafter inert gas is introduced in the chamber to be filled, and thereby the inside of the chamber is brought into an atmospheric pressure state. Then, alignment is performed so that the first junction surface 103a and the second junction surface 105a abut each other, the first junction surface 103a and the second junction surface 105a are allowed to abut each other, and both are heated at around 150°C and pressurized. Thus, the first junction surface 103a and the second junction surface 105a are joined. |
