SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To solve expected difficulty in formation of wiring by separation when a gap between transistors becomes narrower in a constitution where the wiring is separated in a narrow part between neighboring transistors.SOLUTION: A semiconductor device comprises: a first transistor including a first diffusion layer region, a first body region and a second diffusion layer region which are formed side by side in a direction perpendicular to a principal surface; a second transistor including a third diffusion layer region, a second body region and a fourth diffusion layer region which are formed side by side in the direction perpendicular to the principal surface; a first resistance change element provided on the second diffusion layer region of the first transistor; a second resistance change element provided on the fourth diffusion layer region of the second transistor; a bit line commonly connected to the first resistance change element and the second resistance change element; a first word line arranged on one side of the first body region; a second word line arranged between the other side of the first body region and one side of the second body region; and a third word line arranged on the other side of the second body region.