| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which can avoid defects of the semiconductor device due to a short circuit at a through electrode to improve yield.SOLUTION: A semiconductor device manufacturing method according to an embodiment comprises: forming on a first surface of a semiconductor substrate, an annular insulation film having an annular shape when viewed from the first surface side; sequentially stacking on the first surface and the annular insulation film, a first insulation film, a silicon film and a first metal film; forming an opening by using the first metal film as a stopper, which pierces the semiconductor substrate and the first insulation film and the silicon film from a second surface of the semiconductor substrate and which passes inside a ring of the annular insulation film to reach a surface of the first metal film; forming a second insulation film so as to cover an inner wall of the opening; and embedding a second metal film in the opening to form a through electrode connected to the first metal film. |
