| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To adjust a composition ratio of two or more materials at high precision to form a thin film such as CIGS film. <P>SOLUTION: According to a method of controlling the composition of a multi-source deposit thin film, a first material (Se) supplied in a chamber 11 is kept in a heated state in a film forming process. In the same film forming process, the composition ratio of two or more materials (Ga, In) supplied in the chamber 11 is detected based on a change in an oscillation frequency from a deposit on a vibrator 25 placed in the chamber 11 to control the composition ratio. In a different film forming process, the composition ratio of two or more materials (Ga, In, Cu) supplied in the chamber 11 in multiple steps is controlled by detecting the film thickness of a deposit on a measuring board 33 placed in the chamber 11 through light interference with the thin film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
