发明名称 |
Semiconductor devices including vertical channel pattern |
摘要 |
An insulating pattern is disposed on a surface of a semiconductor substrate and includes a silicon oxynitride film. A conductive pattern is disposed on the insulating pattern. A data storage pattern and a vertical channel pattern are disposed within a channel hole formed to vertically penetrate the insulating pattern and the conductive pattern. The data storage pattern and the vertical channel pattern are conformally stacked along sidewalls of the insulating pattern and the conductive pattern. A concave portion is formed in the semiconductor substrate adjacent to the insulating pattern. The concave portion is recessed relative to a bottom surface of the insulating pattern. |
申请公布号 |
US8637917(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113208640 |
申请日期 |
2011.08.12 |
申请人 |
LEE JU-YUL;CHOI HAN-MEI;YOO DONG-CHUL;JE YOUNG-JONG;HWANG KI-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JU-YUL;CHOI HAN-MEI;YOO DONG-CHUL;JE YOUNG-JONG;HWANG KI-HYUN |
分类号 |
H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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