| 发明名称 |
Electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure |
| 摘要 |
A structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. The first and the second SCRs each include at least one component commonly shared between the first and the second SCRs. |
| 申请公布号 |
US8637900(B2) |
申请公布日期 |
2014.01.28 |
| 申请号 |
US201213686422 |
申请日期 |
2012.11.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAUTHIER, JR. ROBERT J.;LI JUNJUN;SRIVASTAVA ANKIT |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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