| 摘要 |
The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed. |
