| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding wire which improves forming property and bondability of a ball part, has excellent loop controllability, as well, increases the bonding strength of wedge connection, secures industrial productivity, and mainly includes copper less expensive than a gold wire. <P>SOLUTION: The bonding wire for the semiconductor device includes a core material whose main component is copper and a cover layer of the conductive metal of a composition different from the core material on the core material. The main component of the cover layer is one or more kinds selected from among gold, palladium, platinum, rhodium, silver or nickel, a region having the concentration gradient of at least one of the main component metals and copper in a wire-diameter direction is present inside the cover layer, and the forefront area of an alloy containing at least two kinds of gold, palladium, platinum, rhodium, silver or nickel in the uniform concentration of 0.1 mol% or higher is present on the surface side of the cover layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
