Embedded stress inducing source/drain extensions for finfet transistors

摘要

Multigate transistor (MuGFET) devices comprising, a fin and a gate structure 704, that is disposed on a top and side surfaces of the fin, are formed and a portion of a lower portion of the fin is removed to form recesses below the gate structure, and below a channel region 802 of the fin. The recesses define angled indentations below the channel region in which SiGe source/drain extension regions 1202 are epitaxially regrown. The source/drain extensions apply a stress on the channel region to enhance charge carrier mobility in the channel region.