发明名称 |
Phase change memory device, storage system having the same and fabricating method thereof |
摘要 |
Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other. |
申请公布号 |
US8634236(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US201113234924 |
申请日期 |
2011.09.16 |
申请人 |
PARK HYE-YOUNG;PARK JEONG-HEE;KWON HYUN-SUK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK HYE-YOUNG;PARK JEONG-HEE;KWON HYUN-SUK |
分类号 |
G11C11/00;G11C5/02;H01L21/00;H01L21/06;H01L29/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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