发明名称 |
Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion |
摘要 |
A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material. |
申请公布号 |
US8633084(B1) |
申请公布日期 |
2014.01.21 |
申请号 |
US201213654258 |
申请日期 |
2012.10.17 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
RAMASWAMY D. V. NIRMAL;COOK BETH R.;BI LEI;HUANG WAYNE;LABORIANTE IAN C. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|