SEMICONDUCTOR DEVICE HAVING DRAIN AND ISOLATION STRUCTURE INTERCONNECTED VIA DIODE CIRCUIT, AND DRIVER CIRCUIT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a drain and an isolation structure interconnected via a diode circuit, and to provide a driver circuit and a manufacturing method therefor.SOLUTION: The semiconductor device includes: a semiconductor substrate 210; a buried layer 220 under a substrate upper surface 212; a sinker region 222 between the substrate upper surface and the buried layer, forming an isolation structure in conjunction with the buried layer; and an active device located in a part of the semiconductor substrate received by the isolation structure, and including a drain region 236.