| 摘要 |
PROBLEM TO BE SOLVED: To prevent characteristic deterioration of a photoelectric conversion film and to secure reliability of a wiring layer.SOLUTION: In a solid-state imaging device, the wiring layer side of a pixel substrate in which a wiring layer using a wiring material capable of withstanding the temperature during formation of a photoelectric conversion film and a semiconductor element are formed is bonded to the rear surface side of a logic substrate having a semiconductor element formed therein, and a wiring layer is formed in the logic substrate after formation of the photoelectric conversion film on the rear surface side of the pixel substrate, whereby the wiring layer is arranged on the front surface side of the pixel substrate and the photoelectric conversion film is arranged on the rear surface side of the pixel substrate. This technique is applicable, for example, to a solid-state imaging device. |
