| 摘要 |
<p>PURPOSE: A method for manufacturing a crystalline silicon solar cell is provided to reduce processing time by growing a SiO2 layer on the front and the back surface of a solar cell at the same time. CONSTITUTION: Surface damage to a silicon substrate of a first conductivity type is removed (ST210). A texturing process is performed on the surface of the silicon substrate of the first conductivity type (ST220). The front and the back surface of the substrate are doped with phosphor and boron respectively (ST230). A SiO2 layer is grown on the front and the back surface of the substrate at the same time while the thermal process is performed (ST240). A SiNx layer is deposited on the front and the back surface of the SiO2 layer (ST250). A hole is formed in the back surface of the SiO2 layer and the back surface of the SiNx layer (ST260). A front electrode and a back electrode are formed on the front surface of the SiNx layer and the back surface of the SiNx layer (ST270). A firing process is performed on the front electrode and the back electrode (ST280). [Reference numerals] (ST210) Substrate preparation and surface damage removal (SDR); (ST220) Texturing; (ST230) Ion doping (front: P, back: B); (ST240) Annealing, front/back SiO_2 growth; (ST250) Front/back SiNx evaporation; (ST260) Back laser treatment; (ST270) Front/back metallization; (ST280) Firing; (ST290) Feature evaluation (Voc, Isc, FF, Efficiency, etc.)</p> |
