发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing temperature variation while suppressing an increase in size.SOLUTION: A semiconductor device includes: a nitride semiconductor layer 12 provided on a substrate 10; an active region 17 and an inactive region 19 provided in the nitride semiconductor layer 12; a hole 20 provided in a region of the substrate 10 corresponding to the active region 17; and a member 26 provided in the hole 20. The thermal time constant per unit volume of the member 26 is larger than that of the substrate 10.
申请公布号 JP2014011349(A) 申请公布日期 2014.01.20
申请号 JP20120147536 申请日期 2012.06.29
申请人 SUMITOMO ELECTRIC IND LTD 发明人 YAMAMOTO HIROSHI
分类号 H01L21/338;H01L21/3205;H01L21/768;H01L23/522;H01L29/778;H01L29/812 主分类号 H01L21/338
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