| 发明名称 |
LIGHT EMITTING SEMICONDUCTOR DEVICE |
| 摘要 |
An InGaAsP/InP light emitting semiconductor device which includes an active layer buried in a groove. A (111) B facet of the InP crystal, which is an inclined side plane of the groove, is exposed. The side edges of the InGaAsP active layer reach to the (111) B facet. |
| 申请公布号 |
DE3278661(D1) |
申请公布日期 |
1988.07.14 |
| 申请号 |
DE19823278661 |
申请日期 |
1982.03.31 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
ISHIKAWA, HIROSHI;TAKAGI, NOBUYUKI;IMAI, HAJIME |
| 分类号 |
H01L21/208;H01S5/00;H01S5/22;H01S5/223;H01S5/24;H01S5/323 |
主分类号 |
H01L21/208 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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